# Applied Physics Letters

**Type:** Journals  
**Canonical URL:** https://scholariq.org/journals/applied-physics-letters/

## Facts

| Field | Value |
| --- | --- |
| Open Access | false |
| ISSN-L | 0003-6951 |
| ISSNs | 0003-6951,1077-3118,1520-8842 |
| OpenAlex ID | https://openalex.org/S105243760 |
| Publisher | American Institute of Physics |

## Journal papers

Showing 12 of 45.

- [230% room-temperature magnetoresistance in CoFeB∕MgO∕CoFeB magnetic tunnel junctions](https://scholariq.org/papers/230-room-temperature-magnetoresistance-in-cofeb-mgo-cofeb-magnetic-tunnel/)
- [Optical bandgap energy of wurtzite InN](https://scholariq.org/papers/optical-bandgap-energy-of-wurtzite-inn/)
- [Tapping mode atomic force microscopy in liquid](https://scholariq.org/papers/tapping-mode-atomic-force-microscopy-in-liquid/)
- [Plasma-induced alignment of carbon nanotubes](https://scholariq.org/papers/plasma-induced-alignment-of-carbon-nanotubes/)
- [Nucleation and growth of carbon nanotubes by microwave plasma chemical vapor deposition](https://scholariq.org/papers/nucleation-and-growth-of-carbon-nanotubes-by-microwave-plasma-chemical-vapor/)
- [Reversible hysteresis for broadband magnetopiezoelastic energy harvesting](https://scholariq.org/papers/reversible-hysteresis-for-broadband-magnetopiezoelastic-energy-harvesting/)
- [Tamm plasmon polaritons: Slow and spatially compact light](https://scholariq.org/papers/tamm-plasmon-polaritons-slow-and-spatially-compact-light/)
- [Wake-up effects in Si-doped hafnium oxide ferroelectric thin films](https://scholariq.org/papers/wake-up-effects-in-si-doped-hafnium-oxide-ferroelectric-thin-films/)
- [Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor](https://scholariq.org/papers/temperature-dependence-of-the-first-order-metal-insulator-transition-in-vo2-and/)
- [A chip scale electrocaloric effect based cooling device](https://scholariq.org/papers/a-chip-scale-electrocaloric-effect-based-cooling-device/)
- [Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films](https://scholariq.org/papers/influence-of-electrode-material-on-the-resistive-memory-switching-property-of/)
- [Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress](https://scholariq.org/papers/behaviors-of-ingazno-thin-film-transistor-under-illuminated-positive-gate-bias/)

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Source: ScholarIQ — public research metadata, principally OpenAlex. See https://scholariq.org/sources/ for provenance and https://scholariq.org/methodology/ for what these figures mean.