# IEEE Electron Device Letters

**Type:** Journals  
**Canonical URL:** https://scholariq.org/journals/ieee-electron-device-letters/

## Facts

| Field | Value |
| --- | --- |
| Open Access | false |
| ISSN-L | 0741-3106 |
| ISSNs | 0741-3106,1558-0563 |
| OpenAlex ID | https://openalex.org/S19887683 |
| Publisher | Institute of Electrical and Electronics Engineers |

## Journal papers

- [p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current](https://scholariq.org/papers/p-gan-gate-hemts-with-tungsten-gate-metal-for-high-threshold-voltage-and-low/)
- [The hetero-epitaxial SiCN/Si MSM photodetector for high-temperature deep-UV detecting applications](https://scholariq.org/papers/the-hetero-epitaxial-sicn-si-msm-photodetector-for-high-temperature-deep-uv/)
- [Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes](https://scholariq.org/papers/zero-mask-contact-fuse-for-one-time-programmable-memory-in-standard-cmos/)
- [Novel Silicon-Controlled Rectifier With Snapback-Free Performance for High-Voltage and Robust ESD Protection](https://scholariq.org/papers/novel-silicon-controlled-rectifier-with-snapback-free-performance-for-high/)
- [Comparative Analysis of <i>n</i>- and <i>p</i>-Type Ferroelectric Tunnel Junctions Through Understanding of Non-FE Resistance Switching](https://scholariq.org/papers/comparative-analysis-of-i-n-i-and-i-p-i-type-ferroelectric-tunnel-junctions/)

---
Source: ScholarIQ — public research metadata, principally OpenAlex. See https://scholariq.org/sources/ for provenance and https://scholariq.org/methodology/ for what these figures mean.