# IEEE Transactions on Electron Devices

**Type:** Journals  
**Canonical URL:** https://scholariq.org/journals/ieee-transactions-on-electron-devices/

## Facts

| Field | Value |
| --- | --- |
| Open Access | false |
| ISSN-L | 0018-9383 |
| ISSNs | 0018-9383,1557-9646 |
| OpenAlex ID | https://openalex.org/S162355128 |
| Publisher | Institute of Electrical and Electronics Engineers |

## Journal papers

- [Characterization, Modeling, and Application of 10-kV SiC MOSFET](https://scholariq.org/papers/characterization-modeling-and-application-of-10-kv-sic-mosfet/)
- [A simple and accurate method to measure the threshold voltage of an enhancement-mode MOSFET](https://scholariq.org/papers/a-simple-and-accurate-method-to-measure-the-threshold-voltage-of-an-enhancement/)
- [Transient analysis of MOS transistors](https://scholariq.org/papers/transient-analysis-of-mos-transistors/)
- [Influence of the Source–Gate Distance on the AlGaN/GaN HEMT Performance](https://scholariq.org/papers/influence-of-the-source-gate-distance-on-the-algan-gan-hemt-performance/)
- [MOSFET-Based Memristor for High-Frequency Signal Processing](https://scholariq.org/papers/mosfet-based-memristor-for-high-frequency-signal-processing/)
- [Impact of Molybdenum Oxide Electrode on the Ferroelectricity of Doped-Hafnia Oxide Capacitors](https://scholariq.org/papers/impact-of-molybdenum-oxide-electrode-on-the-ferroelectricity-of-doped-hafnia/)
- [A Novel Ultralow <i>R</i> <sub>ON,sp</sub> Triple RESURF LDMOS With Sandwich n-p-n Layer](https://scholariq.org/papers/a-novel-ultralow-i-r-i-sub-on-sp-sub-triple-resurf-ldmos-with-sandwich-n-p-n/)

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Source: ScholarIQ — public research metadata, principally OpenAlex. See https://scholariq.org/sources/ for provenance and https://scholariq.org/methodology/ for what these figures mean.