# A 0.602 /spl mu/m/sup 2/ nestled 'Chain' cell structure formed by one mask etching process for 64 Mbit FeRAM

**Type:** Papers  
**Canonical URL:** https://scholariq.org/papers/a-0-602-spl-mu-m-sup-2-nestled-chain-cell-structure-formed-by-one-mask-etching/

## Facts

| Field | Value |
| --- | --- |
| Author Names | Haruichi Kanaya,K. Tomioka,T. Matsushita,Mitsuhiro Omura,T. Ozaki,Y. Kumura,Y. Shimojo,T. Morimoto,O. Hidaka,S. Shuto,Hiroshi Koyama,Yuki Yamada,Kazutomo Osari,N. Tokoh,F. Fujisaki,N. Iwabuchi,Naoya Yamaguchi,T. Watanabe,Masanori Yabuki,Hiroshi Shinomiya,Naoya Watanabe,E. Itoh,T. Tsuchiya,K. Yamakawa,Kenji Natori,S. Yamazaki,Kimitaka Nakazawa,D. Takashima,S. Shiratake,Satoshi Ohtsuki,Y. Oowaki,I. Kunishima,A. Nitayama |
| Citations | 16 |
| DOI | 10.1109/vlsit.2004.1345446 |
| Fields | Engineering |
| Open Access | false |
| OA Status | closed |
| OpenAlex ID | https://openalex.org/W2041113407 |
| Type | conference-paper |
| Year | 2004 |

## Paper authors

- [T. Matsushita](https://scholariq.org/researchers/t-matsushita/)

## Paper primary topic

- [Ferroelectric and Negative Capacitance Devices](https://scholariq.org/topics/ferroelectric-and-negative-capacitance-devices/)

## Paper topics

- [Ferroelectric and Negative Capacitance Devices](https://scholariq.org/topics/ferroelectric-and-negative-capacitance-devices/)
- [Advanced Memory and Neural Computing](https://scholariq.org/topics/advanced-memory-and-neural-computing/)
- [Semiconductor materials and devices](https://scholariq.org/topics/semiconductor-materials-and-devices/)

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Source: ScholarIQ — public research metadata, principally OpenAlex. See https://scholariq.org/sources/ for provenance and https://scholariq.org/methodology/ for what these figures mean.