# A Highly Reliable Memory Cell Design Combined With Layout-Level Approach to Tolerant Single-Event Upsets

**Type:** Papers  
**Canonical URL:** https://scholariq.org/papers/a-highly-reliable-memory-cell-design-combined-with-layout-level-approach-to/

## Facts

| Field | Value |
| --- | --- |
| Author Names | Chunhua Qi,Liyi Xiao,Tianqi Wang,Jie Li,Linzhe Li |
| Citations | 139 |
| DOI | 10.1109/tdmr.2016.2593590 |
| Fields | Engineering |
| Open Access | false |
| OA Status | closed |
| OpenAlex ID | https://openalex.org/W2494978579 |
| Type | article |
| Year | 2016 |

## Paper authors

- [Jie Li](https://scholariq.org/researchers/jie-li/)

## Paper primary topic

- [Radiation Effects in Electronics](https://scholariq.org/topics/radiation-effects-in-electronics/)

## Paper topics

- [Radiation Effects in Electronics](https://scholariq.org/topics/radiation-effects-in-electronics/)
- [Advanced Memory and Neural Computing](https://scholariq.org/topics/advanced-memory-and-neural-computing/)
- [Low-power high-performance VLSI design](https://scholariq.org/topics/low-power-high-performance-vlsi-design/)

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Source: ScholarIQ — public research metadata, principally OpenAlex. See https://scholariq.org/sources/ for provenance and https://scholariq.org/methodology/ for what these figures mean.