# Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors

**Type:** Papers  
**Canonical URL:** https://scholariq.org/papers/device-performance-limits-and-negative-capacitance-of-monolayer-gese-and-gete/

## Facts

| Field | Value |
| --- | --- |
| Author Names | Peipei Xu,Jiakun Liang,Hong Li,Fengbin Liu,Jun Tie,Zhiwei Jiao,Jing Luo,Jing Lü |
| Citations | 29 |
| DOI | 10.1039/d0ra02265a |
| Fields | Engineering,Materials Science,Physics and Astronomy |
| Open Access | true |
| OA Status | gold |
| OA URL | https://pubs.rsc.org/en/content/articlepdf/2020/ra/d0ra02265a |
| OpenAlex ID | https://openalex.org/W3017534601 |
| PMID | 35493676 |
| Type | article |
| Year | 2020 |

## Paper authors

- [Jun Tie](https://scholariq.org/researchers/jun-tie/)

## Paper primary topic

- [2D Materials and Applications](https://scholariq.org/topics/2d-materials-and-applications/)

## Paper topics

- [2D Materials and Applications](https://scholariq.org/topics/2d-materials-and-applications/)
- [Molecular Junctions and Nanostructures](https://scholariq.org/topics/molecular-junctions-and-nanostructures/)
- [Semiconductor materials and interfaces](https://scholariq.org/topics/semiconductor-materials-and-interfaces/)

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Source: ScholarIQ — public research metadata, principally OpenAlex. See https://scholariq.org/sources/ for provenance and https://scholariq.org/methodology/ for what these figures mean.