# Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors

**Type:** Papers  
**Canonical URL:** https://scholariq.org/papers/device-performances-and-instabilities-of-the-engineered-active-layer-with/

## Facts

| Field | Value |
| --- | --- |
| Author Names | Dong Geun Lee,1 Dept. of Electronics Eng., Incheon National Univ., Incheon, 406-772, Korea,Hwan Chul Yoo,Eun-Ki Hong,Won-Ju Cho,Jong Tae Park,2 Dept. of Electronic Materials Eng., Kwangwoon Univ., Seoul, 139-701, Korea |
| Citations | 4 |
| DOI | 10.3934/matersci.2020.5.596 |
| Fields | Engineering |
| Open Access | true |
| OA Status | gold |
| OA URL | https://doi.org/10.3934/matersci.2020.5.596 |
| OpenAlex ID | https://openalex.org/W3085816255 |
| Type | article |
| Year | 2020 |

## Paper authors

- [Dong Geun Lee](https://scholariq.org/researchers/dong-geun-lee/)

## Paper journal

- [AIMS Materials Science](https://scholariq.org/journals/aims-materials-science/)

## Paper primary topic

- [Thin-Film Transistor Technologies](https://scholariq.org/topics/thin-film-transistor-technologies/)

## Paper topics

- [Thin-Film Transistor Technologies](https://scholariq.org/topics/thin-film-transistor-technologies/)

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