# Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

**Type:** Papers  
**Canonical URL:** https://scholariq.org/papers/influence-of-electrode-material-on-the-resistive-memory-switching-property-of/

## Facts

| Field | Value |
| --- | --- |
| Author Names | Min-Chen Chen,Ting‐Chang Chang,Chih-Tsung Tsai,Sheng-Yao Huang,Shih-Ching Chen,Chih‐Wei Hu,Simon M. Sze,Ming‐Jinn Tsai |
| Citations | 191 |
| DOI | 10.1063/1.3456379 |
| Fields | Engineering,Materials Science |
| Open Access | false |
| OA Status | closed |
| OpenAlex ID | https://openalex.org/W1985209067 |
| Type | article |
| Year | 2010 |

## Paper authors

- [Shih-Ching Chen](https://scholariq.org/researchers/shih-ching-chen/)

## Paper primary topic

- [Advanced Memory and Neural Computing](https://scholariq.org/topics/advanced-memory-and-neural-computing/)

## Paper topics

- [Advanced Memory and Neural Computing](https://scholariq.org/topics/advanced-memory-and-neural-computing/)
- [Transition Metal Oxide Nanomaterials](https://scholariq.org/topics/transition-metal-oxide-nanomaterials/)
- [CCD and CMOS Imaging Sensors](https://scholariq.org/topics/ccd-and-cmos-imaging-sensors/)

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Source: ScholarIQ — public research metadata, principally OpenAlex. See https://scholariq.org/sources/ for provenance and https://scholariq.org/methodology/ for what these figures mean.