# Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs

**Type:** Papers  
**Canonical URL:** https://scholariq.org/papers/influence-of-heavy-ion-irradiation-on-dc-and-gate-lag-performance-of-algan-gan/

## Facts

| Field | Value |
| --- | --- |
| Author Names | 雷志锋,郭红霞,曾畅,陈辉,王远声,张战刚 |
| Citations | 1 |
| Fields | Engineering,Materials Science,Physics and Astronomy |
| Open Access | false |
| OA Status | closed |
| OpenAlex ID | https://openalex.org/W1535391800 |
| Type | article |
| Year | 2015 |

## Paper authors

- [陈辉](https://scholariq.org/researchers/a5028589329/)

## Paper journal

- [中国物理B：英文版](https://scholariq.org/journals/b/)

## Paper primary topic

- [GaN-based semiconductor devices and materials](https://scholariq.org/topics/gan-based-semiconductor-devices-and-materials/)

## Paper topics

- [GaN-based semiconductor devices and materials](https://scholariq.org/topics/gan-based-semiconductor-devices-and-materials/)
- [Semiconductor materials and devices](https://scholariq.org/topics/semiconductor-materials-and-devices/)
- [Ga2O3 and related materials](https://scholariq.org/topics/ga2o3-and-related-materials/)

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Source: ScholarIQ — public research metadata, principally OpenAlex. See https://scholariq.org/sources/ for provenance and https://scholariq.org/methodology/ for what these figures mean.