# Influence of the Source–Gate Distance on the AlGaN/GaN HEMT Performance

**Type:** Papers  
**Canonical URL:** https://scholariq.org/papers/influence-of-the-source-gate-distance-on-the-algan-gan-hemt-performance/

## Facts

| Field | Value |
| --- | --- |
| Author Names | Stefano Russo,Aldo Di Carlo |
| Citations | 78 |
| DOI | 10.1109/ted.2007.894614 |
| Fields | Engineering,Physics and Astronomy |
| Open Access | false |
| OA Status | closed |
| OpenAlex ID | https://openalex.org/W2116884970 |
| Type | article |
| Year | 2007 |

## Paper authors

- [Stefano Russo](https://scholariq.org/researchers/stefano-russo/)

## Paper primary topic

- [GaN-based semiconductor devices and materials](https://scholariq.org/topics/gan-based-semiconductor-devices-and-materials/)

## Paper topics

- [GaN-based semiconductor devices and materials](https://scholariq.org/topics/gan-based-semiconductor-devices-and-materials/)
- [Semiconductor Quantum Structures and Devices](https://scholariq.org/topics/semiconductor-quantum-structures-and-devices/)
- [Silicon Carbide Semiconductor Technologies](https://scholariq.org/topics/silicon-carbide-semiconductor-technologies/)

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Source: ScholarIQ — public research metadata, principally OpenAlex. See https://scholariq.org/sources/ for provenance and https://scholariq.org/methodology/ for what these figures mean.