# p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

**Type:** Papers  
**Canonical URL:** https://scholariq.org/papers/p-gan-gate-hemts-with-tungsten-gate-metal-for-high-threshold-voltage-and-low/

## Facts

| Field | Value |
| --- | --- |
| Author Names | Injun Hwang,Jongseob Kim,Hyuk Choi,Hyoji Choi,Jaewon Lee,Kyung Yeon Kim,Jong-Bong Park,Jae Cheol Lee,Jong‐Bong Ha,Jaejoon Oh,Jaikwang Shin,U‐In Chung |
| Citations | 286 |
| DOI | 10.1109/led.2012.2230312 |
| Fields | Materials Science,Physics and Astronomy |
| Open Access | false |
| OA Status | closed |
| OpenAlex ID | https://openalex.org/W1987837737 |
| Type | article |
| Year | 2013 |

## Paper authors

- [Jae Cheol Lee](https://scholariq.org/researchers/jae-cheol-lee/)

## Paper primary topic

- [GaN-based semiconductor devices and materials](https://scholariq.org/topics/gan-based-semiconductor-devices-and-materials/)

## Paper topics

- [GaN-based semiconductor devices and materials](https://scholariq.org/topics/gan-based-semiconductor-devices-and-materials/)
- [Ga2O3 and related materials](https://scholariq.org/topics/ga2o3-and-related-materials/)
- [ZnO doping and properties](https://scholariq.org/topics/zno-doping-and-properties/)

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Source: ScholarIQ — public research metadata, principally OpenAlex. See https://scholariq.org/sources/ for provenance and https://scholariq.org/methodology/ for what these figures mean.