# Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

**Type:** Papers  
**Canonical URL:** https://scholariq.org/papers/wake-up-effects-in-si-doped-hafnium-oxide-ferroelectric-thin-films/

## Facts

| Field | Value |
| --- | --- |
| Author Names | Dayu Zhou,Jin Xu,Qing Li,Yan Guan,Fei Cao,Xianlin Dong,Johannes Müller,Tony Schenk,U. Schröder |
| Citations | 401 |
| DOI | 10.1063/1.4829064 |
| Fields | Engineering |
| Open Access | false |
| OA Status | closed |
| OpenAlex ID | https://openalex.org/W2018452678 |
| Type | article |
| Year | 2013 |

## Paper authors

- [Qing Li](https://scholariq.org/researchers/qing-li-2/)

## Paper primary topic

- [Ferroelectric and Negative Capacitance Devices](https://scholariq.org/topics/ferroelectric-and-negative-capacitance-devices/)

## Paper topics

- [Ferroelectric and Negative Capacitance Devices](https://scholariq.org/topics/ferroelectric-and-negative-capacitance-devices/)
- [Semiconductor materials and devices](https://scholariq.org/topics/semiconductor-materials-and-devices/)
- [Advanced Memory and Neural Computing](https://scholariq.org/topics/advanced-memory-and-neural-computing/)

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Source: ScholarIQ — public research metadata, principally OpenAlex. See https://scholariq.org/sources/ for provenance and https://scholariq.org/methodology/ for what these figures mean.