# Ferroelectric and Negative Capacitance Devices

**Type:** Topics  
**Canonical URL:** https://scholariq.org/topics/ferroelectric-and-negative-capacitance-devices/

## Facts

| Field | Value |
| --- | --- |
| Description | This cluster of papers focuses on the development and application of ferroelectric devices, particularly in the context of low-power nanoscale applications. The research covers topics such as ferroelectricity in hafnium oxide thin films, negative capacitance in ferroelectric capacitors, doping effects on ferroelectric properties, and the use of ferroelectric field-effect transistors for memory and computing applications. |
| Domain | Physical Sciences |
| Field | Engineering |
| OpenAlex ID | t12808 |
| Works | 26 |

## Topic papers all

Showing 15 of 26.

- [Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum](https://scholariq.org/papers/spin-torque-switching-with-the-giant-spin-hall-effect-of-tantalum/)
- [Wake-up effects in Si-doped hafnium oxide ferroelectric thin films](https://scholariq.org/papers/wake-up-effects-in-si-doped-hafnium-oxide-ferroelectric-thin-films/)
- [Fabrication and errors in the bibliographic citations generated by ChatGPT](https://scholariq.org/papers/fabrication-and-errors-in-the-bibliographic-citations-generated-by-chatgpt/)
- [Switching Kinetic of VCM‐Based Memristor: Evolution and Positioning of Nanofilament](https://scholariq.org/papers/switching-kinetic-of-vcm-based-memristor-evolution-and-positioning-of/)
- [How to report and benchmark emerging field-effect transistors](https://scholariq.org/papers/how-to-report-and-benchmark-emerging-field-effect-transistors/)
- [Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics](https://scholariq.org/papers/revival-of-ferroelectric-memories-based-on-emerging-fluorite-structured/)
- [CARLsim 4: An Open Source Library for Large Scale, Biologically Detailed Spiking Neural Network Simulation using Heterogeneous Clusters](https://scholariq.org/papers/carlsim-4-an-open-source-library-for-large-scale-biologically-detailed-spiking/)
- [SnSe/MoS<sub>2</sub> van der Waals Heterostructure Junction Field‐Effect Transistors with Nearly Ideal Subthreshold Slope](https://scholariq.org/papers/snse-mos-sub-2-sub-van-der-waals-heterostructure-junction-field-effect/)
- [Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films](https://scholariq.org/papers/ferroelectricity-and-ferroelectric-resistive-switching-in-sputtered-hf0-5zr0-5o2/)
- [MOSFET-Based Memristor for High-Frequency Signal Processing](https://scholariq.org/papers/mosfet-based-memristor-for-high-frequency-signal-processing/)
- [High-performance sub-10-nm monolayer black phosphorene tunneling transistors](https://scholariq.org/papers/high-performance-sub-10-nm-monolayer-black-phosphorene-tunneling-transistors/)
- [CARLsim 3: A user-friendly and highly optimized library for the creation of neurobiologically detailed spiking neural networks](https://scholariq.org/papers/carlsim-3-a-user-friendly-and-highly-optimized-library-for-the-creation-of/)
- [Multilevel memory and artificial synaptic plasticity in P(VDF-TrFE)-based ferroelectric field effect transistors](https://scholariq.org/papers/multilevel-memory-and-artificial-synaptic-plasticity-in-p-vdf-trfe-based/)
- [COMB-MCM: Computing-on-Memory-Boundary NN Processor with Bipolar Bitwise Sparsity Optimization for Scalable Multi-Chiplet-Module Edge Machine Learning](https://scholariq.org/papers/comb-mcm-computing-on-memory-boundary-nn-processor-with-bipolar-bitwise-sparsity/)
- [Trainable Spiking-YOLO for low-latency and high-performance object detection](https://scholariq.org/papers/trainable-spiking-yolo-for-low-latency-and-high-performance-object-detection/)

## Topic primary papers

- [Wake-up effects in Si-doped hafnium oxide ferroelectric thin films](https://scholariq.org/papers/wake-up-effects-in-si-doped-hafnium-oxide-ferroelectric-thin-films/)
- [Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics](https://scholariq.org/papers/revival-of-ferroelectric-memories-based-on-emerging-fluorite-structured/)
- [Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films](https://scholariq.org/papers/ferroelectricity-and-ferroelectric-resistive-switching-in-sputtered-hf0-5zr0-5o2/)
- [COMB-MCM: Computing-on-Memory-Boundary NN Processor with Bipolar Bitwise Sparsity Optimization for Scalable Multi-Chiplet-Module Edge Machine Learning](https://scholariq.org/papers/comb-mcm-computing-on-memory-boundary-nn-processor-with-bipolar-bitwise-sparsity/)
- [Impact of Molybdenum Oxide Electrode on the Ferroelectricity of Doped-Hafnia Oxide Capacitors](https://scholariq.org/papers/impact-of-molybdenum-oxide-electrode-on-the-ferroelectricity-of-doped-hafnia/)
- [Comparative Analysis of <i>n</i>- and <i>p</i>-Type Ferroelectric Tunnel Junctions Through Understanding of Non-FE Resistance Switching](https://scholariq.org/papers/comparative-analysis-of-i-n-i-and-i-p-i-type-ferroelectric-tunnel-junctions/)
- [A 0.602 /spl mu/m/sup 2/ nestled 'Chain' cell structure formed by one mask etching process for 64 Mbit FeRAM](https://scholariq.org/papers/a-0-602-spl-mu-m-sup-2-nestled-chain-cell-structure-formed-by-one-mask-etching/)
- [CT-1-3 22nm世代に向けたFinFET SRAM技術(CT-1.10nm世代に向けた新LSI技術,チュートリアル講演,ソサイエティ企画)](https://scholariq.org/papers/ct-1-3-22nm-finfet-sram-ct-1-10nm-lsi/)

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Source: ScholarIQ — public research metadata, principally OpenAlex. See https://scholariq.org/sources/ for provenance and https://scholariq.org/methodology/ for what these figures mean.