# GaN-based semiconductor devices and materials

**Type:** Topics  
**Canonical URL:** https://scholariq.org/topics/gan-based-semiconductor-devices-and-materials/

## Facts

| Field | Value |
| --- | --- |
| Description | This cluster of papers focuses on the first-principles calculations, properties, and applications of III-nitride semiconductors, particularly Gallium Nitride (GaN) and its alloys. It covers topics such as defects and impurities, band parameters, high-power light-emitting diodes (LEDs), AlGaN/GaN HEMTs, nanowires, UV LEDs, and their applications in solid-state lighting. |
| Domain | Physical Sciences |
| Field | Physics and Astronomy |
| OpenAlex ID | t10099 |
| Works | 18 |

## Topic papers all

Showing 15 of 18.

- [Optical bandgap energy of wurtzite InN](https://scholariq.org/papers/optical-bandgap-energy-of-wurtzite-inn/)
- [p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current](https://scholariq.org/papers/p-gan-gate-hemts-with-tungsten-gate-metal-for-high-threshold-voltage-and-low/)
- [Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion](https://scholariq.org/papers/aluminum-oxide-from-trimethylaluminum-and-water-by-atomic-layer-deposition-the/)
- [Optical Analysis of Color Distribution in White LEDs With Various Packaging Methods](https://scholariq.org/papers/optical-analysis-of-color-distribution-in-white-leds-with-various-packaging/)
- [Measurement and numerical studies of optical properties of YAG:Ce phosphor for white light-emitting diode packaging](https://scholariq.org/papers/measurement-and-numerical-studies-of-optical-properties-of-yag-ce-phosphor-for/)
- [Full-Color Fluorescent Display Devices Using a Near-UV Light-Emitting Diode](https://scholariq.org/papers/full-color-fluorescent-display-devices-using-a-near-uv-light-emitting-diode/)
- [Prospects for rare earth doped GaN lasers on Si](https://scholariq.org/papers/prospects-for-rare-earth-doped-gan-lasers-on-si/)
- [A novel miniature planar inductor](https://scholariq.org/papers/a-novel-miniature-planar-inductor/)
- [Influence of the Source–Gate Distance on the AlGaN/GaN HEMT Performance](https://scholariq.org/papers/influence-of-the-source-gate-distance-on-the-algan-gan-hemt-performance/)
- [The hetero-epitaxial SiCN/Si MSM photodetector for high-temperature deep-UV detecting applications](https://scholariq.org/papers/the-hetero-epitaxial-sicn-si-msm-photodetector-for-high-temperature-deep-uv/)
- [Epitaxial growth of GdN on silicon substrate using an AlN buffer layer](https://scholariq.org/papers/epitaxial-growth-of-gdn-on-silicon-substrate-using-an-aln-buffer-layer/)
- [The spectral selective absorbing characteristics and thermal stability of SS/TiAlN/TiAlSiN/Si 3 N 4 tandem absorber prepared by magnetron sputtering](https://scholariq.org/papers/the-spectral-selective-absorbing-characteristics-and-thermal-stability-of-ss/)
- [Characteristics and analysis of a thin film inductor with closed magnetic circuit structure](https://scholariq.org/papers/characteristics-and-analysis-of-a-thin-film-inductor-with-closed-magnetic/)
- [Highly uniform growth of 2-inch GaN wafers with a multi-wafer HVPE system](https://scholariq.org/papers/highly-uniform-growth-of-2-inch-gan-wafers-with-a-multi-wafer-hvpe-system/)
- [A highly efficient octave bandwidth high power amplifier in GaN technology](https://scholariq.org/papers/a-highly-efficient-octave-bandwidth-high-power-amplifier-in-gan-technology/)

## Topic primary papers

- [Optical bandgap energy of wurtzite InN](https://scholariq.org/papers/optical-bandgap-energy-of-wurtzite-inn/)
- [p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current](https://scholariq.org/papers/p-gan-gate-hemts-with-tungsten-gate-metal-for-high-threshold-voltage-and-low/)
- [Optical Analysis of Color Distribution in White LEDs With Various Packaging Methods](https://scholariq.org/papers/optical-analysis-of-color-distribution-in-white-leds-with-various-packaging/)
- [Measurement and numerical studies of optical properties of YAG:Ce phosphor for white light-emitting diode packaging](https://scholariq.org/papers/measurement-and-numerical-studies-of-optical-properties-of-yag-ce-phosphor-for/)
- [Full-Color Fluorescent Display Devices Using a Near-UV Light-Emitting Diode](https://scholariq.org/papers/full-color-fluorescent-display-devices-using-a-near-uv-light-emitting-diode/)
- [Prospects for rare earth doped GaN lasers on Si](https://scholariq.org/papers/prospects-for-rare-earth-doped-gan-lasers-on-si/)
- [Influence of the Source–Gate Distance on the AlGaN/GaN HEMT Performance](https://scholariq.org/papers/influence-of-the-source-gate-distance-on-the-algan-gan-hemt-performance/)
- [Epitaxial growth of GdN on silicon substrate using an AlN buffer layer](https://scholariq.org/papers/epitaxial-growth-of-gdn-on-silicon-substrate-using-an-aln-buffer-layer/)
- [Highly uniform growth of 2-inch GaN wafers with a multi-wafer HVPE system](https://scholariq.org/papers/highly-uniform-growth-of-2-inch-gan-wafers-with-a-multi-wafer-hvpe-system/)
- [A highly efficient octave bandwidth high power amplifier in GaN technology](https://scholariq.org/papers/a-highly-efficient-octave-bandwidth-high-power-amplifier-in-gan-technology/)
- [Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs](https://scholariq.org/papers/influence-of-heavy-ion-irradiation-on-dc-and-gate-lag-performance-of-algan-gan/)

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Source: ScholarIQ — public research metadata, principally OpenAlex. See https://scholariq.org/sources/ for provenance and https://scholariq.org/methodology/ for what these figures mean.