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A Highly Reliable Memory Cell Design Combined With Layout-Level Approach to Tolerant Single-Event Upsets

PaperCitations, authors & open-access status

A Highly Reliable Memory Cell Design Combined With Layout-Level Approach to Tolerant Single-Event Upsets is a paper indexed in ScholarIQ from OpenAlex. ScholarIQ records 139 citations, 2016 year and closed oa status.

139
Citations
2016
Year
closed
OA Status

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