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Controllable etching of MoS2 basal planes for enhanced hydrogen evolution through the formation of active edge sites
PaperCitations, authors & open-access status
Controllable etching of MoS2 basal planes for enhanced hydrogen evolution through the formation of active edge sites is a paper indexed in ScholarIQ from OpenAlex. ScholarIQ records 262 citations, 2018 year and closed oa status.
262
Citations
2018
Year
closed
OA Status