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Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors
PaperCitations, authors & open-access status
Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors is a paper indexed in ScholarIQ from OpenAlex. ScholarIQ records 4 citations, 2020 year and gold oa status.
4
Citations
2020
Year
gold
OA Status