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Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors

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Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors is a paper indexed in ScholarIQ from OpenAlex.

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Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors has 4 citations in the OpenAlex counts ScholarIQ stores.

When was Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors published?

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Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors has 2020 year in the ScholarIQ index.

What is the open-access status of Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors?

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Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors has gold oa status in the ScholarIQ index.

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The DOI for Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors is on the source record.

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The OpenAlex for Device performances and instabilities of the engineered active layer with different film thickness and composition ratios in amorphous InGaZnO thin film transistors is on the source record.

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