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Hopping transport and the Hall effect near the insulator–metal transition in electrochemically gated poly(3-hexylthiophene) transistors
PaperCitations, authors & open-access status
Hopping transport and the Hall effect near the insulator–metal transition in electrochemically gated poly(3-hexylthiophene) transistors is a paper indexed in ScholarIQ from OpenAlex. ScholarIQ records 202 citations, 2012 year and bronze oa status.
202
Citations
2012
Year
bronze
OA Status