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Ferroelectric and Negative Capacitance Devices

TopicLeading institutions, researchers & key papers

Ferroelectric and Negative Capacitance Devices is a topic indexed in ScholarIQ from OpenAlex.

What is known about Ferroelectric and Negative Capacitance Devices?

ScholarIQrecord summary

This cluster of papers focuses on the development and application of ferroelectric devices, particularly in the context of low-power nanoscale applications. The research covers topics such as ferroelectricity in hafnium oxide thin films, negative capacitance in ferroelectric capacitors, doping effects on ferroelectric properties, and the use of ferroelectric field-effect transistors for memory and computing applications.

How many works does Ferroelectric and Negative Capacitance Devices have?

ScholarIQindexed works

Ferroelectric and Negative Capacitance Devices has 26 works in the ScholarIQ index. The count is the OpenAlex total, not the number of papers listed on this page.

What is the OpenAlex record for Ferroelectric and Negative Capacitance Devices?

ScholarIQopenalex

The OpenAlex for Ferroelectric and Negative Capacitance Devices is on the source record.

What are the most-cited papers on Ferroelectric and Negative Capacitance Devices?

ScholarIQmost cited works
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
Dayu Zhou, Jin Xu, Qing Li, Yan Guan, Fei Cao, Xianlin Dong, Johannes Müller, Tony Schenk, U. Schröder
Applied Physics Letters. 2013401 Citations
Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics
Ju Yong Park, Duk‐Hyun Choe, Dong Hyun Lee, Geun Taek Yu, Kun Yang, Se Hyun Kim, Geun Hyeong Park, Seung‐Geol Nam, Hyun Jae Lee, Sanghyun Jo, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Jinseong Heo, Min Hyuk Park
Advanced Materials. 2022177 CitationsOPEN ACCESS
Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films
Zhen Fan, Juanxiu Xiao, Jingxian Wang, Lei Zhang, Jinyu Deng, Ziyan Liu, Zhili Dong, John Wang, Jingsheng Chen
Applied Physics Letters. 201673 CitationsOPEN ACCESS
COMB-MCM: Computing-on-Memory-Boundary NN Processor with Bipolar Bitwise Sparsity Optimization for Scalable Multi-Chiplet-Module Edge Machine Learning
Haozhe Zhu, Bo Jiao, Jinshan Zhang, Xinru Jia, Yunzhengmao Wang, Tianchan Guan, Shengcheng Wang, Dimin Niu, Hongzhong Zheng, Chixiao Chen, Mingyu Wang, Lihua Zhang, Xiaoyang Zeng, Qi Liu, Yuan Xie, Ming Liu
2022 IEEE International Solid- State Circuits Conference (ISSCC). 202251 Citations
Impact of Molybdenum Oxide Electrode on the Ferroelectricity of Doped-Hafnia Oxide Capacitors
Ruiting Zhao, Ting Liu, Xiaoyue Zhao, Houfang Liu, Minghao Shao, Qixin Feng, Xichen Sun, Xiaoming Wu, Yi Yang, Tian‐Ling Ren
IEEE Transactions on Electron Devices. 202225 Citations

Where is Ferroelectric and Negative Capacitance Devices research published, and who funds it?

ScholarIQvenues & funding sources

TOP FUNDERS

National Science Foundation—
NIH—
Wellcome Trust—
European Research Council—
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How much of the research on Ferroelectric and Negative Capacitance Devices is open access?

ScholarIQopen access share
25%OPEN ACCESS
Gold
0%
Green
0%
Hybrid
13%
Bronze
13%
Closed
75%

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