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Ferroelectric and Negative Capacitance Devices

TopicLeading institutions, researchers & key papers

This cluster of papers focuses on the development and application of ferroelectric devices, particularly in the context of low-power nanoscale applications. The research covers topics such as ferroelectricity in hafnium oxide thin films, negative capacitance in ferroelectric capacitors, doping effects on ferroelectric properties, and the use of ferroelectric field-effect transistors for memory and computing applications.

26
Works

How has Ferroelectric and Negative Capacitance Devices's publication output changed over time?

ScholarIQpublication output · 2004–2023

Output grew0% over the shown period — from 1 works in 2004 to 1 in 2023.

1
1
1
1
3
1
200420072013201620222023

What are the most-cited papers on Ferroelectric and Negative Capacitance Devices?

ScholarIQmost cited works
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
Dayu Zhou, Jin Xu, Qing Li, Yan Guan, Fei Cao, Xianlin Dong, Johannes Müller, Tony Schenk, U. Schröder
S105243760. 2013401 Citations
Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics
Ju Yong Park, Duk‐Hyun Choe, Dong Hyun Lee, Geun Taek Yu, Kun Yang, Se Hyun Kim, Geun Hyeong Park, Seung‐Geol Nam, Hyun Jae Lee, Sanghyun Jo, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Jinseong Heo, Min Hyuk Park
S99352657. 2022177 CitationsOPEN ACCESS
Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films
Zhen Fan, Juanxiu Xiao, Jingxian Wang, Lei Zhang, Jinyu Deng, Ziyan Liu, Zhili Dong, John Wang, Jingsheng Chen
S105243760. 201673 CitationsOPEN ACCESS
COMB-MCM: Computing-on-Memory-Boundary NN Processor with Bipolar Bitwise Sparsity Optimization for Scalable Multi-Chiplet-Module Edge Machine Learning
Haozhe Zhu, Bo Jiao, Jinshan Zhang, Xinru Jia, Yunzhengmao Wang, Tianchan Guan, Shengcheng Wang, Dimin Niu, Hongzhong Zheng, Chixiao Chen, Mingyu Wang, Lihua Zhang, Xiaoyang Zeng, Qi Liu, Yuan Xie, Ming Liu
S4363607897. 202251 Citations
Impact of Molybdenum Oxide Electrode on the Ferroelectricity of Doped-Hafnia Oxide Capacitors
Ruiting Zhao, Ting Liu, Xiaoyue Zhao, Houfang Liu, Minghao Shao, Qixin Feng, Xichen Sun, Xiaoming Wu, Yi Yang, Tian‐Ling Ren
S162355128. 202225 Citations

Where is Ferroelectric and Negative Capacitance Devices research published, and who funds it?

ScholarIQvenues & funding sources

TOP JOURNALS

S105243760474
S99352657177
S436360789751
S16235512825
S1988768317

TOP FUNDERS

National Science Foundation
NIH
Wellcome Trust
European Research Council
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How much of the research on Ferroelectric and Negative Capacitance Devices is open access?

ScholarIQopen access share
25%OPEN ACCESS
Gold
0%
Green
0%
Hybrid
13%
Bronze
13%
Closed
75%

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