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Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

PaperCitations, authors & open-access status

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films is a paper indexed in ScholarIQ from OpenAlex. ScholarIQ records 401 citations, 2013 year and closed oa status.

401
Citations
2013
Year
closed
OA Status

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