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Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

PaperCitations, authors & open-access status

Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress is a paper indexed in ScholarIQ from OpenAlex. ScholarIQ records 184 citations, 2010 year and closed oa status.

184
Citations
2010
Year
closed
OA Status

Related on ScholarIQ

Shih-Ching Chen
Author
Thin-Film Transistor Technologies
Topic
Thin-Film Transistor Technologies
Topic
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Semiconductor materials and devices
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