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Gamma-ray-irradiation effects on the leakage current and reliability of sputtered TiO2 gate oxide in metal–oxide–semiconductor capacitors

PaperCitations, authors & open-access status

Gamma-ray-irradiation effects on the leakage current and reliability of sputtered TiO2 gate oxide in metal–oxide–semiconductor capacitors is a paper indexed in ScholarIQ from OpenAlex.

How many citations does Gamma-ray-irradiation effects on the leakage current and reliability of sputtered TiO2 gate oxide in metal–oxide–semiconductor capacitors have?

ScholarIQcitation count

Gamma-ray-irradiation effects on the leakage current and reliability of sputtered TiO2 gate oxide in metal–oxide–semiconductor capacitors has 39 citations in the OpenAlex counts ScholarIQ stores.

When was Gamma-ray-irradiation effects on the leakage current and reliability of sputtered TiO2 gate oxide in metal–oxide–semiconductor capacitors published?

ScholarIQyear

Gamma-ray-irradiation effects on the leakage current and reliability of sputtered TiO2 gate oxide in metal–oxide–semiconductor capacitors has 2002 year in the ScholarIQ index.

What is the open-access status of Gamma-ray-irradiation effects on the leakage current and reliability of sputtered TiO2 gate oxide in metal–oxide–semiconductor capacitors?

ScholarIQoa status

Gamma-ray-irradiation effects on the leakage current and reliability of sputtered TiO2 gate oxide in metal–oxide–semiconductor capacitors has closed oa status in the ScholarIQ index.

What is the DOI of Gamma-ray-irradiation effects on the leakage current and reliability of sputtered TiO2 gate oxide in metal–oxide–semiconductor capacitors?

ScholarIQdoi

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The OpenAlex for Gamma-ray-irradiation effects on the leakage current and reliability of sputtered TiO2 gate oxide in metal–oxide–semiconductor capacitors is on the source record.

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