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Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

PaperCitations, authors & open-access status

Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor is a paper indexed in ScholarIQ from OpenAlex. ScholarIQ records 171 citations, 2010 year and closed oa status.

171
Citations
2010
Year
closed
OA Status

Related on ScholarIQ

Shih-Ching Chen
Author
Thin-Film Transistor Technologies
Topic
Thin-Film Transistor Technologies
Topic
ZnO doping and properties
Topic
Semiconductor materials and devices
Topic
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