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p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

PaperCitations, authors & open-access status

p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current is a paper indexed in ScholarIQ from OpenAlex. ScholarIQ records 286 citations, 2013 year and closed oa status.

286
Citations
2013
Year
closed
OA Status

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