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GaN-based semiconductor devices and materials
TopicLeading institutions, researchers & key papers
This cluster of papers focuses on the first-principles calculations, properties, and applications of III-nitride semiconductors, particularly Gallium Nitride (GaN) and its alloys. It covers topics such as defects and impurities, band parameters, high-power light-emitting diodes (LEDs), AlGaN/GaN HEMTs, nanowires, UV LEDs, and their applications in solid-state lighting.
18
Works
IDs:OpenAlex
How has GaN-based semiconductor devices and materials's publication output changed over time?
ScholarIQpublication output · 1996–2015
Output grew0% over the shown period — from 1 works in 1996 to 1 in 2015.
1
1
2
1
2
1
2
1
19962002200720082010201120132015
What are the most-cited papers on GaN-based semiconductor devices and materials?
ScholarIQmost cited works
Optical bandgap energy of wurtzite InN
Takashi Matsuoka, Hiroshi Okamoto, Masashi Nakao, Hiroshi Harima, Eiji Kurimoto
S105243760. 2002730 CitationsOPEN ACCESS
p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
Injun Hwang, Jongseob Kim, Hyuk Choi, Hyoji Choi, Jaewon Lee, Kyung Yeon Kim, Jong-Bong Park, Jae Cheol Lee, Jong‐Bong Ha, Jaejoon Oh, Jaikwang Shin, U‐In Chung
S19887683. 2013286 Citations
Optical Analysis of Color Distribution in White LEDs With Various Packaging Methods
Zongyuan Liu, Sheng Liu, Kai Wang, Xiaobing Luo
S27723657. 2008185 Citations
Measurement and numerical studies of optical properties of YAG:Ce phosphor for white light-emitting diode packaging
Zongyuan Liu, Sheng Liu, Kai Wang, Xiaobing Luo
S4210211917. 2010167 Citations
Full-Color Fluorescent Display Devices Using a Near-UV Light-Emitting Diode
Yuichi Sato Yuichi Sato, Nobuyuki Takahashi, Susumu Sato
S143744711. 1996139 CitationsOPEN ACCESS
Where is GaN-based semiconductor devices and materials research published, and who funds it?
ScholarIQvenues & funding sources
TOP JOURNALS
S105243760730
S19887683286
S27723657185
S4210211917167
S143744711139
TOP FUNDERS
National Science Foundation—
NIH—
Wellcome Trust—
European Research Council—
Funder breakdown is a member featureSign up free to unlock
How much of the research on GaN-based semiconductor devices and materials is open access?
ScholarIQopen access share
36%OPEN ACCESS
Gold
0%
Green
9%
Hybrid
18%
Bronze
9%
Closed
64%
Related on ScholarIQ
Optical bandgap energy of wurtzite InN
Paper
p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
Paper
Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion
Paper
Optical Analysis of Color Distribution in White LEDs With Various Packaging Methods
Paper
Measurement and numerical studies of optical properties of YAG:Ce phosphor for white light-emitting diode packaging
Paper
Full-Color Fluorescent Display Devices Using a Near-UV Light-Emitting Diode
Paper