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Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices

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Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices is a paper indexed in ScholarIQ from OpenAlex.

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Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices has 79 citations in the OpenAlex counts ScholarIQ stores.

When was Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices published?

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Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices has 2007 year in the ScholarIQ index.

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Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices has closed oa status in the ScholarIQ index.

What is the DOI of Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices?

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The OpenAlex for Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices is on the source record.

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