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Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices
PaperCitations, authors & open-access status
Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices is a paper indexed in ScholarIQ from OpenAlex. ScholarIQ records 79 citations, 2007 year and closed oa status.
79
Citations
2007
Year
closed
OA Status