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Advancements in Semiconductor Devices and Circuit Design
TopicLeading institutions, researchers & key papers
This cluster of papers explores the advancements in nanoelectronics, focusing on topics such as tunnel field-effect transistors, nanowire transistors, CMOS scaling limits, double-gate transistors, strained-silicon technology, quantum transport modeling, junctionless transistors, subthreshold swing, high-performance nanoscale devices, and process variation.
40
Works
IDs:OpenAlex
How has Advancements in Semiconductor Devices and Circuit Design's publication output changed over time?
ScholarIQpublication output · 1980–2017
Output declined50% over the shown period — from 2 works in 1980 to 1 in 2017.
2
1
1
1
1980198220112017
What are the most-cited papers on Advancements in Semiconductor Devices and Circuit Design?
ScholarIQmost cited works
A 10nm high performance and low-power CMOS technology featuring 3<sup>rd</sup> generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate and cobalt local interconnects
C. Auth, A. Aliyarukunju, M. Asoro, D. Bergstrom, Vinay Bhagwat, Jacquelyn Birdsall, Nabhendra Bisnik, Markus J. Buehler, V. Chikarmane, G. Ding, Qin Fu, Hector Gomez, Woo-Jin Han, Dennis G. Hanken, M. Haran, M. Hattendorf, R. Heussner, Hidenori Hiramatsu, Byron Ho, S. Jaloviar, Ik Kyeong Jin, Saurabh Joshi, Steven D. Kirby, Satyanarayana Kosaraju, H. Kothari, G. Leatherman, K. Lee, J. Leib, Advait Madhavan, K. Marla, H.‐G. Meyer, T. Mule, C. Parker, Srinivasan Parthasarathy, C. Pelto, Leonard C. Pipes, I. Post, M. B. Prince, Anisur Rahman, Saravanan Rajamani, Aloke Saha, Joana D. Santos, Monika Sharma, Vikrant Sharma, Jung H. Shin, Pankaj Sinha, Patrick M. Smith, M. Sprinkle, A. St. Amour, Chad Staus, Rahul Suri, D. J. Towner, Awnish Kumar Tripathi, Ahmet Tura, C. M. Ward, A. Yeoh
2017372 Citations
Transient Analysis of MOS Transistors
Soo‐Young Oh, D.E. Ward, R.W. Dutton
S83637746. 1980138 Citations
A simple and accurate method to measure the threshold voltage of an enhancement-mode MOSFET
Hee‐Gook Lee, Soo‐Young Oh, George C. Fuller
S162355128. 1982104 Citations
Transient analysis of MOS transistors
Soo‐Young Oh, D.E. Ward, R.W. Dutton
S162355128. 1980100 Citations
Takeuchiプロットを用いたHigh-k/Metal-Gate MOSFETのばらつき評価(低電圧/低消費電力技術,新デバイス・回路とその応用)
朋子 水谷, Anil Kumar, 彰男 西田, 潔 竹内, 聡 稲葉, 史朗 蒲原, 和夫 寺田, 徹 最上, 俊郎 平本
SIAM International Conference on Data Mining. 20110 Citations
Where is Advancements in Semiconductor Devices and Circuit Design research published, and who funds it?
ScholarIQvenues & funding sources
TOP JOURNALS
TOP FUNDERS
National Science Foundation—
NIH—
Wellcome Trust—
European Research Council—
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How much of the research on Advancements in Semiconductor Devices and Circuit Design is open access?
ScholarIQopen access share
0%OPEN ACCESS
Gold
0%
Green
0%
Hybrid
0%
Bronze
0%
Closed
100%
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